Zinc oxide (ZnO) nanowires (NWs) are promising for sensitive optoelectronic sensors due to their properties. However, they can experience bias stress instability. Researchers have shown how controlled gate stress bias can tune threshold voltage in printed ZnO NW-based photosensitive devices. These devices respond to pulse stimuli with potential for precise conductance control, resembling synaptic behavior. This active tuning could enable near-sensor or in-sensor computing in large-area smart sensing applications like artificial retina. Congratulations Fengyuan Liu et al.! Click here for detailed read.